GS8321Z18GE-200I

Specifications

  • Part Number:GS8321Z18GE-200I
  • Type:NBT SRAMs
  • Density:36Mb
  • Configuration:x18
  • Cycle Time (MHz):200
  • Access Time (ns):7.5
  • Voltage (V):2.5
  • Package:165 BGA
  • 6/6 RoHS:yes
  • Temp:Ind
  • Special Features:JTAG
  • Status:Production-NRND
  • MSL:3
  • ECCN:3A991
  • ECCN Suball:B2B
  • HTS Code:8542.32.00.40
  • REACH Certificate:
  • MDS:Contact Us
  • Conflict Minerals Info:Contact Us
  • Datasheet
    Verilog
    BSDL
    VHDL
    IBIS

  • NBT functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available

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AN1008

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AN1007

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AN1004

Cycle and Access Time Interpretation for Non-Technical People

AN1003

Designing with GSI's Flow Through Mode Pin

AN1002

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AN1001

Using ByteSafe™ SRAMs in Parity and Non-Parity Applications