DDR SRAMs

GSI's SigmaDDR SRAMs are the acknowledged leader in the industry with their combination of capacity and performance. SigmaDDR transaction rates are unequaled by any competitors.


SigmaDDR SRAMs are synchronous memories with a common read and write data bus. “DDR” refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above.


GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.

 

Name Density Config. Speed (MHz) Burst Length Read Latency (RL) On Die Termination Package 6/6 ROHS Temp Special Features Status
SigmaDDR-IVe
View 44 products
144Mb x18, x36 Up to 1333 2 6, 5 Weak/Strong/None 260 BGA yes Comm, Ind, Mil See Individual Products Production, Active
SigmaDDR-IIIe
View 88 products
72Mb, 288Mb, 144Mb x18, x36 Up to 833 2 3, 2 Weak/Strong/None 260 BGA no, yes Mil, Comm, Ind See Individual Products Production, Active
SigmaDDR-II+
View 1160 products
288Mb, 144Mb, 72Mb, 36Mb, 18Mb x18, x36, x8, x9 Up to 633 2 2.5, 2 Weak/None, Weak/Strong, n/a 165 BGA yes, no Comm, Ind See Individual Products Production, NRND, Samples
SigmaDDR-II
View 662 products
144Mb, 72Mb, 36Mb, 18Mb x8, x9, x18, x36 Up to 400 2, 4 1.5 n/a 165 BGA no, yes Mil, Comm, Ind See Individual Products Contact Sales, Production, NRND
SigmaSIO DDR-II
View 348 products
288Mb, 144Mb, 72Mb, 36Mb, 18Mb x18, x36, x8, x9 Up to 400 2 1.5 n/a 165 BGA no, yes Comm, Ind See Individual Products Production, Samples
Part Number Density Config. Speed (MHz) Burst Length Read Latency (RL) On-Die Termination Package 6/6 RoHS Temp Special Features Status
GS81314LT36GK-106 144Mb x36 1066 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V HSTL I/O,Multi-Bank Production
GS81314LT36GK-133I 144Mb x36 1333 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V HSTL I/O,Multi-Bank Production
GS81314LT36GK-120I 144Mb x36 1200 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V HSTL I/O,Multi-Bank Production
GS81314LT36GK-106I 144Mb x36 1066 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V HSTL I/O,Multi-Bank Production
GS81314PT18GK-133 144Mb x18 1333 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT18GK-120 144Mb x18 1200 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT18GK-106 144Mb x18 1066 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT18GK-133I 144Mb x18 1333 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT18GK-120I 144Mb x18 1200 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT18GK-106I 144Mb x18 1066 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT36GK-133 144Mb x36 1333 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT36GK-120 144Mb x36 1200 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT36GK-106 144Mb x36 1066 2 6 Weak/Strong/None 260 BGA yes Comm ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT36GK-133I 144Mb x36 1333 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT36GK-120I 144Mb x36 1200 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS81314PT36GK-106I 144Mb x36 1066 2 6 Weak/Strong/None 260 BGA yes Ind ECCRAM,1.2 V POD I/O,Multi-Bank Production
GS82583ET18GK-675 288Mb x18 675 2 3 Weak/Strong/None 260 BGA yes Comm none Production
GS82583ET18GK-625 288Mb x18 625 2 3 Weak/Strong/None 260 BGA yes Comm none Production
GS82583ET18GK-550 288Mb x18 550 2 3 Weak/Strong/None 260 BGA yes Comm none Production
GS82583ET18GK-500 288Mb x18 500 2 3 Weak/Strong/None 260 BGA yes Comm none Production

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