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GS8128418B-200V

Specifications

  • Part Number: GS8128418B-200V
  • Type: SyncBurst SRAMs
  • Access Time (ns): 7.5
  • Configuration: x18
  • Voltage (V): 2.5 1.8
  • Cycle Time (MHz): 200
  • Density: 144Mb
  • Package: 119 BGA
  • 6/6 RoHS: no
  • Temp: Comm
  • Special Features: JTAG FLXDrive SCD/DCD Select
  • Status: Production
  • MSL: 3
  • ECCN: 3A991
  • ECCN Suball: B2B
  • HTS Code: 8542.32.00.41
  • REACH Certificate:
  • MDS:
  • Conflict Minerals Info: Contact Us
  • Datasheet:
  • Verilog:
  • BSDL:
  • VHDL:
  • IBIS:
  • Industry-standard Synchronous Burst Interface
  • ZQ mode pin for user-selectable high/low output drive
  • LBO pin for Linear or Interleaved Burst mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard pinout and package
  • RoHS-compliant package available
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